| Sign In | Join Free | My xpshou.com |
|
Brand Name : Double Light
Model Number : DL-PCB0603PTC-1PT120
Certification : ISO9001:2008,ROHS
Place of Origin : China (mainland)
MOQ : 10,000pcs
Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability : 15,000,000pcs per Day
Delivery Time : 5-7 working days after received your payment
Packaging Details : Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms
Product Name : 0603 smd Phototransistor
Emitted Color : Phototransistor
Power Dissipation : 100mW
Chip Material : Silicon
Lens Type : Water Clear
Collector-Emitter Voltage : 50V
Collector Current : 20mA
Reception Angle : 120Deg
Wavelength Of Peak Sensitivity : 940nm
Rang Of Spectral Bandwidth : 400-1100nm
0.8mm Height 0603 Package 2 PIN SMD Phototransistor Infrared Light Sensor high sensitive silicon NPN phototransistor

| Part No. | Chip Material | Lens Color | Source Color |
| DL-PCB00603PTC-1PT120 | Silicon | Water Clear | Phototransistor |
Notes:
Absolute Maximum Ratings at Ta=25℃
| Parameters | Symbol | Rating | Unit |
| Power Dissipation At (or below) 25℃ free Air Temperature | PD | 100 | mW |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Collector-Voltage | VECO | 5 | V |
| Collector Current | IC | 20 | mA |
| Operating Temperature | Topr | -25 to +80 | ℃ |
| Storage Temperature | Tstg | -30 to +85 | ℃ |
| Soldering Temperature | Tsol | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition |
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | --- | --- | V | IC=100μA, Ee=0mW/cm² |
| Emitter-Collector Breakdown Voltage | BVECO | 5 | --- | --- | V | IE=100μA, Ee=0mW/cm² |
| Collector-Emitter Saturation Voltage | VCE(SAT) | --- | --- | 0.40 | V | IC=2mA, Ee=1mW/cm² |
| Collector Dark Current | ICEO | --- | --- | 100 | nA | VCE=20V, Ee=0mW/cm² |
| On State Collector Current | IC(ON) | 0.67 | 1.50 | --- | mA | VCE=5V, Ee=1mW/cm² |
| Optical Rise Time (10% to 90%) | TR | --- | 15 | --- | μs | VCE=5V, IC=1mA, RL=1000Ω |
| Optical Fall Time (90% to 10%) | TF | --- | 15 | --- | ||
| Reception Angle | 2θ1/2 | --- | 120 | --- | Deg | |
| Wavelength Of Peak Sensitivity | λP | --- | 940 | --- | nm | |
| Rang Of Spectral Bandwidth | λ0.5 | 400 | --- | 1100 | nm |
(25℃ Ambient Temperature Unless Otherwise Noted)




|
|
2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height Images |