940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

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940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

Name: 940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC100μA Ee0mWcm
Brand: Double Light
Price: 1 USD

China 940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm² wholesale

Brand Name : Double Light

Model Number : DL-503PTC

Certification : ISO9001:2008,ROHS

Place of Origin : China (mainland)

MOQ : 10,000pcs

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000pcs per Day

Delivery Time : 5-7 working days after received your payment

Packaging Details : Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms

Product Name : LED Phototransistor

Diameter : Dip 5mm

Emitted Color : Phototransistor

Peak Emission Wavelength : 940nm

Chip Material : Silicon

Lens Type : Water Clear

Forward Voltage @20ma : 1.1-1.4V

Viewing Angle : 80 Deg

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940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

5mm LED Phototransistor

Features:

5mm round standard t-1 3/4 package.
Fast response time.
High photo sensitivity.
Small junction capacitance.
The product itself will remain within RoHS compliant Version.

Descriptions:

The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
Due to its black epoxy, the device is matched to visible light and infrared radiation.

Applications:

Infrared applied system.
Optoelectronic automatic control system.
Optoelectronic switch.
Camera.
Printer.
Counters and sorters.
Encoders.
Floppy disk drive.
Video camera, tape and card readers.
Position sensors.

Absolute Maximum Ratings at Ta=25℃

Parameters	Symbol	Rating	Unit
Power Dissipation	P_D	75	mW
Collector-Emitter Voltage	V_CEO	30	V
Emitter-Collector-Voltage	V_ECO	5	V
Collector Current	I_C	20	mA
Operating Temperature	T_OPR	-40 to +85	℃
Storage Temperature	T_STG	-40 to +100	℃
Lead Soldering Temperature	T_SOL	260℃	℃

Electrical Optical Characteristics at Ta=25℃

Parameters	Symbol	Min.	Typ.	Max.	Unit	Condition
Collector-Emitter Breakdown Voltage	BV_CEO	30	---	---	V	I_C=100μA, Ee=0mW/cm²
Emitter-Collector Breakdown Voltage	BV_ECO	5	---	---	V	I_E=100μA, Ee=0mW/cm²
Collector-Emitter Saturation Voltage	V_CE(SAT)	---	---	0.40	V	I_C=0.70mA, Ee=1mW/cm²
Collector Dark Current	I_CEO	---	---	100	nA	Ee=0mW/cm², V_CE=20V
On-State Collector Current	I_C(ON)	0.70	2.00	---	mA	Ee=1mW/cm², V_CE=5V
Optical Rise Time (10% to 90%)	T_R	---	15	---	μs	V_CE=5V, I_C=1mA, R_L=100Ω
Optical Fall Time (90% to 10%)	T_F	---	15	---	μs	V_CE=5V, I_C=1mA, R_L=100Ω
Reception Angle	2θ_1/2	---	30	---	Deg
Wavelength Of Peak Sensitivity	λP	---	940	---	nm
Rang Of Spectral Bandwidth	λ0.5	400	---	1100	nm

Infrared Emitting Diode Package Dimension:

940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

Product Tags:

ir emitting diode

940nm infrared led

940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm² Images

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