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GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

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GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Name: GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode
Brand: Double Light
Price: 1 USD

China GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode wholesale

Brand Name : Double Light

Model Number : DL-HP10SIRA-1SIR120

Certification : ISO9001:2008,ROHS

Place of Origin : China (mainland)

MOQ : 10,000pcs

Price : Negotiated

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000pcs per Day

Delivery Time : 5-7 working days after received your payment

Packaging Details : Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms

Chip Material : GaAlAs

Power Dissipation : 1000mW

Reverse Voltage : 5V

Peak Emission Wavelength : 850nm

Forward Current : 350mA

Viewing Angle : 120 Deg

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DL-HP10SIRA-1SIR120.pdf

Features:

High reliability.
High radiant intensity.
Low forward voltage.
Peak wavelength λp=850nm.
The product itself will remain within RoHS compliant version.

Descriptions:

The DL-HP10SIR Infrared Emitting Diode is a high intensity diode.
The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

Applications:

Free air transmission system.
Optoelectronic switch.
Floppy disk drive.
Infrared applied system.
Smoke detector.

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Part No.	Chip Material	Lens Color	Source Color
DL-HP10SIRA-1SIR120	GaAlAs	Water Clear	Infrared

Notes:

All dimensions are in millimeters.
Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
Specifications are subject to change without notice.

Absolute Maximum Ratings at Ta=25℃

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	1000	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
Forward Current	IF	350	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-10℃ to +70℃
Storage Temperature Range	Tstg	-20℃ to +80℃
Soldering Temperature	Tsol	260℃ for 5 Seconds

Electrical Optical Characteristics at Ta=25℃

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity	Ie	110	180	----	mW/Sr	IF=350mA
Viewing Angle *	2θ1/2	----	120	----	Deg	(Note 1)
Peak Emission Wavelength	λp	----	850	----	nm	IF=350mA
Spectral Bandwidth	△λ	----	45	----	nm	IF=350mA
Forward Voltage	VF	1.30	1.50	1.80	V	IF =350mA
Reverse Current	IR	----	----	50	µA	V R =5V

Notes:

θ 1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Product Tags:

1W Infrared Emitting Diode

1000mW Infrared Emitting Diode

850nm High Power Emitting Diode

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode Images

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